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THIN STACKED OXIDE NITRIDE OXIDE DIELECTRICS FORMATION BY INSITU MULTIPLE REACTIVE RAPID THERMAL-PROCESSING
被引:9
作者
:
TING, W
论文数:
0
引用数:
0
h-index:
0
TING, W
LIN, SN
论文数:
0
引用数:
0
h-index:
0
LIN, SN
KWONG, DL
论文数:
0
引用数:
0
h-index:
0
KWONG, DL
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1989年
/ 55卷
/ 22期
关键词
:
D O I
:
10.1063/1.102359
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:2313 / 2315
页数:3
相关论文
共 9 条
[1]
ABE H, 1985, IEDM, P397
[2]
HOT-CARRIER MEMORY EFFECT IN AN AL/SIN/SIO2/SI MNOS DIODE DUE TO ELECTRICAL STRESS
[J].
CHANG, CY
论文数:
0
引用数:
0
h-index:
0
CHANG, CY
;
TZENG, FC
论文数:
0
引用数:
0
h-index:
0
TZENG, FC
;
CHEN, CT
论文数:
0
引用数:
0
h-index:
0
CHEN, CT
;
MAO, YW
论文数:
0
引用数:
0
h-index:
0
MAO, YW
.
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(09)
:448
-449
[3]
RAPID THERMAL-OXIDATION OF THIN NITRIDE OXIDE STACKED LAYER
[J].
CHANG, WT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TEXAS,DEPT CHEM,AUSTIN,TX 78712
CHANG, WT
;
SHIH, DK
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TEXAS,DEPT CHEM,AUSTIN,TX 78712
SHIH, DK
;
KWONG, DL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TEXAS,DEPT CHEM,AUSTIN,TX 78712
KWONG, DL
;
ZHOU, Y
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TEXAS,DEPT CHEM,AUSTIN,TX 78712
ZHOU, Y
;
LEE, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TEXAS,DEPT CHEM,AUSTIN,TX 78712
LEE, S
.
APPLIED PHYSICS LETTERS,
1989,
54
(05)
:430
-432
[4]
LPCVD OXIDE LPCVD NITRIDE STACKS FOR INTERPOLY DIELECTRICS
[J].
HUANG, TY
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
HUANG, TY
;
COLEMAN, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
COLEMAN, DJ
;
PATERSON, JL
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
PATERSON, JL
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1985,
132
(06)
:1406
-1409
[5]
COMPARISON BETWEEN CVD AND THERMAL OXIDE DIELECTRIC INTEGRITY
[J].
LEE, J
论文数:
0
引用数:
0
h-index:
0
LEE, J
;
CHEN, IC
论文数:
0
引用数:
0
h-index:
0
CHEN, IC
;
HU, C
论文数:
0
引用数:
0
h-index:
0
HU, C
.
IEEE ELECTRON DEVICE LETTERS,
1986,
7
(09)
:506
-509
[6]
SILICON EPITAXIAL-GROWTH BY RAPID THERMAL-PROCESSING CHEMICAL VAPOR-DEPOSITION
[J].
LEE, SK
论文数:
0
引用数:
0
h-index:
0
LEE, SK
;
KU, YH
论文数:
0
引用数:
0
h-index:
0
KU, YH
;
KWONG, DL
论文数:
0
引用数:
0
h-index:
0
KWONG, DL
.
APPLIED PHYSICS LETTERS,
1989,
54
(18)
:1775
-1777
[7]
STUDY OF CARRIER TRAPPING IN STACKED DIELECTRICS
[J].
NOZAKI, S
论文数:
0
引用数:
0
h-index:
0
NOZAKI, S
;
GIRIDHAR, RV
论文数:
0
引用数:
0
h-index:
0
GIRIDHAR, RV
.
IEEE ELECTRON DEVICE LETTERS,
1986,
7
(08)
:486
-489
[8]
STUDY OF THE SIO2/SI INTERFACE ENDURANCE PROPERTY DURING RAPID THERMAL NITRIDATION AND REOXIDATION PROCESSING
[J].
SHIH, DK
论文数:
0
引用数:
0
h-index:
0
机构:
NCR CORP,DIV MICROELECTR,COLORADO SPRINGS,CO 80916
NCR CORP,DIV MICROELECTR,COLORADO SPRINGS,CO 80916
SHIH, DK
;
KWONG, DL
论文数:
0
引用数:
0
h-index:
0
机构:
NCR CORP,DIV MICROELECTR,COLORADO SPRINGS,CO 80916
NCR CORP,DIV MICROELECTR,COLORADO SPRINGS,CO 80916
KWONG, DL
;
LEE, S
论文数:
0
引用数:
0
h-index:
0
机构:
NCR CORP,DIV MICROELECTR,COLORADO SPRINGS,CO 80916
NCR CORP,DIV MICROELECTR,COLORADO SPRINGS,CO 80916
LEE, S
.
APPLIED PHYSICS LETTERS,
1989,
54
(09)
:822
-824
[9]
X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF THE CHEMICAL-STRUCTURE OF THERMALLY NITRIDED SIO2
[J].
VASQUEZ, RP
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
VASQUEZ, RP
;
HECHT, MH
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
HECHT, MH
;
GRUNTHANER, FJ
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
GRUNTHANER, FJ
;
NAIMAN, ML
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
NAIMAN, ML
.
APPLIED PHYSICS LETTERS,
1984,
44
(10)
:969
-971
←
1
→
共 9 条
[1]
ABE H, 1985, IEDM, P397
[2]
HOT-CARRIER MEMORY EFFECT IN AN AL/SIN/SIO2/SI MNOS DIODE DUE TO ELECTRICAL STRESS
[J].
CHANG, CY
论文数:
0
引用数:
0
h-index:
0
CHANG, CY
;
TZENG, FC
论文数:
0
引用数:
0
h-index:
0
TZENG, FC
;
CHEN, CT
论文数:
0
引用数:
0
h-index:
0
CHEN, CT
;
MAO, YW
论文数:
0
引用数:
0
h-index:
0
MAO, YW
.
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(09)
:448
-449
[3]
RAPID THERMAL-OXIDATION OF THIN NITRIDE OXIDE STACKED LAYER
[J].
CHANG, WT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TEXAS,DEPT CHEM,AUSTIN,TX 78712
CHANG, WT
;
SHIH, DK
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TEXAS,DEPT CHEM,AUSTIN,TX 78712
SHIH, DK
;
KWONG, DL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TEXAS,DEPT CHEM,AUSTIN,TX 78712
KWONG, DL
;
ZHOU, Y
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TEXAS,DEPT CHEM,AUSTIN,TX 78712
ZHOU, Y
;
LEE, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TEXAS,DEPT CHEM,AUSTIN,TX 78712
LEE, S
.
APPLIED PHYSICS LETTERS,
1989,
54
(05)
:430
-432
[4]
LPCVD OXIDE LPCVD NITRIDE STACKS FOR INTERPOLY DIELECTRICS
[J].
HUANG, TY
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
HUANG, TY
;
COLEMAN, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
COLEMAN, DJ
;
PATERSON, JL
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
PATERSON, JL
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1985,
132
(06)
:1406
-1409
[5]
COMPARISON BETWEEN CVD AND THERMAL OXIDE DIELECTRIC INTEGRITY
[J].
LEE, J
论文数:
0
引用数:
0
h-index:
0
LEE, J
;
CHEN, IC
论文数:
0
引用数:
0
h-index:
0
CHEN, IC
;
HU, C
论文数:
0
引用数:
0
h-index:
0
HU, C
.
IEEE ELECTRON DEVICE LETTERS,
1986,
7
(09)
:506
-509
[6]
SILICON EPITAXIAL-GROWTH BY RAPID THERMAL-PROCESSING CHEMICAL VAPOR-DEPOSITION
[J].
LEE, SK
论文数:
0
引用数:
0
h-index:
0
LEE, SK
;
KU, YH
论文数:
0
引用数:
0
h-index:
0
KU, YH
;
KWONG, DL
论文数:
0
引用数:
0
h-index:
0
KWONG, DL
.
APPLIED PHYSICS LETTERS,
1989,
54
(18)
:1775
-1777
[7]
STUDY OF CARRIER TRAPPING IN STACKED DIELECTRICS
[J].
NOZAKI, S
论文数:
0
引用数:
0
h-index:
0
NOZAKI, S
;
GIRIDHAR, RV
论文数:
0
引用数:
0
h-index:
0
GIRIDHAR, RV
.
IEEE ELECTRON DEVICE LETTERS,
1986,
7
(08)
:486
-489
[8]
STUDY OF THE SIO2/SI INTERFACE ENDURANCE PROPERTY DURING RAPID THERMAL NITRIDATION AND REOXIDATION PROCESSING
[J].
SHIH, DK
论文数:
0
引用数:
0
h-index:
0
机构:
NCR CORP,DIV MICROELECTR,COLORADO SPRINGS,CO 80916
NCR CORP,DIV MICROELECTR,COLORADO SPRINGS,CO 80916
SHIH, DK
;
KWONG, DL
论文数:
0
引用数:
0
h-index:
0
机构:
NCR CORP,DIV MICROELECTR,COLORADO SPRINGS,CO 80916
NCR CORP,DIV MICROELECTR,COLORADO SPRINGS,CO 80916
KWONG, DL
;
LEE, S
论文数:
0
引用数:
0
h-index:
0
机构:
NCR CORP,DIV MICROELECTR,COLORADO SPRINGS,CO 80916
NCR CORP,DIV MICROELECTR,COLORADO SPRINGS,CO 80916
LEE, S
.
APPLIED PHYSICS LETTERS,
1989,
54
(09)
:822
-824
[9]
X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF THE CHEMICAL-STRUCTURE OF THERMALLY NITRIDED SIO2
[J].
VASQUEZ, RP
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
VASQUEZ, RP
;
HECHT, MH
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
HECHT, MH
;
GRUNTHANER, FJ
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
GRUNTHANER, FJ
;
NAIMAN, ML
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,LINCOLN LAB,LEXINGTON,MA 02173
MIT,LINCOLN LAB,LEXINGTON,MA 02173
NAIMAN, ML
.
APPLIED PHYSICS LETTERS,
1984,
44
(10)
:969
-971
←
1
→