CHEMICALLY-INDUCED INTERFACE STATES IN PHOTO-ELECTROCHEMICAL CELLS

被引:27
作者
BUTLER, MA
GINLEY, DS
机构
关键词
D O I
10.1063/1.94009
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:582 / 584
页数:3
相关论文
共 10 条
[1]   P-TYPE GAP AS A SEMICONDUCTING PHOTOELECTRODE [J].
BUTLER, MA ;
GINLEY, DS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) :1273-1278
[2]   ELECTROCHEMICAL LIGHT-EMITTING-DIODES [J].
BUTLER, MA ;
GINLEY, DS .
APPLIED PHYSICS LETTERS, 1980, 36 (10) :845-847
[3]   SURFACE-TREATMENT INDUCED SUB-BAND GAP PHOTORESPONSE OF GAP PHOTOELECTRODES [J].
BUTLER, MA ;
GINLEY, DS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) :712-714
[4]   SUBBAND GAP RESPONSE OF TIO2 AND SRTIO3 PHOTOELECTRODES [J].
BUTLER, MA ;
ABRAMOVICH, M ;
DECKER, F ;
JULIAO, JF .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) :200-204
[5]   POLYCRYSTALLINE WSE2 PHOTO-ELECTRODES [J].
GINLEY, DS ;
BIEFELD, RM ;
PARKINSON, BA ;
KEUNGKAM, K .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (01) :145-148
[6]  
HELLER A, 1982, PHOTOCHEMICAL CONVER, P63
[7]  
Heller A., 1981, ACS SYM SER, V146, P57
[8]   ENHANCED PHOTOELECTROCHEMICAL SOLAR-ENERGY CONVERSION BY GALLIUM-ARSENIDE SURFACE MODIFICATION [J].
PARKINSON, BA ;
HELLER, A ;
MILLER, B .
APPLIED PHYSICS LETTERS, 1978, 33 (06) :521-523
[9]  
RUSSAK M, 1981, ELECTROCHEMICAL SOC, V81
[10]   PASSIVATION OF GRAIN-BOUNDARIES IN SILICON [J].
SEAGER, CH ;
SHARP, DJ ;
PANITZ, JKG ;
DAIELLO, RV .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :430-435