ELECTRONIC-STRUCTURE OF SILICON

被引:292
作者
CHELIKOWSKY, JR
COHEN, ML
机构
[1] UNIV CALIF,DEPT PHYS,BERKELEY,CA 94720
[2] LAWRENCE BERKELEY LAB,INORG MAT RES DIV,BERKELEY,CA 94720
来源
PHYSICAL REVIEW B | 1974年 / 10卷 / 12期
关键词
D O I
10.1103/PhysRevB.10.5095
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:5095 / 5107
页数:13
相关论文
共 73 条
[1]   MODEL POTENTIAL FOR POSITIVE IONS [J].
ABARENKOV, IV ;
HEINE, V .
PHILOSOPHICAL MAGAZINE, 1965, 12 (117) :529-+
[2]   ELECTRON-DISTRIBUTION IN SILICON .2. THEORETICAL INTERPRETATION [J].
ALDRED, PJE ;
HART, M .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1973, 332 (1589) :239-254
[3]   ELECTRON-DISTRIBUTION IN SILICON .1. EXPERIMENT [J].
ALDRED, PJE ;
HART, M .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1973, 332 (1589) :223-+
[4]   SCREENED MODEL POTENTIAL FOR 25 ELEMENTS [J].
ANIMALU, AOE ;
HEINE, V .
PHILOSOPHICAL MAGAZINE, 1965, 12 (120) :1249-&
[5]  
ANIMALU AOE, UNPUBLISHED
[6]   SELF-CONSISTENT PSEUDOPOTENTIAL FOR SI [J].
APPELBAUM, JA ;
HAMANN, DR .
PHYSICAL REVIEW B, 1973, 8 (04) :1777-1780
[7]   SURFACE-POTENTIAL, CHARGE-DENSITY, AND IONIZATION-POTENTIAL FOR SI(111) - SELF-CONSISTENT CALCULATION [J].
APPELBAUM, JA ;
HAMANN, DR .
PHYSICAL REVIEW LETTERS, 1974, 32 (05) :225-228
[8]   THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE [J].
ASPNES, DE .
SURFACE SCIENCE, 1973, 37 (01) :418-442
[9]   DIRECT OBSERVATION OF E0 AND E0 + DELTA0 TRANSITIONS IN SILICON [J].
ASPNES, DE ;
STUDNA, AA .
SOLID STATE COMMUNICATIONS, 1972, 11 (10) :1375-&
[10]   MEAN-VALUE POINT IN BRILLOUIN ZONE [J].
BALDERESCHI, A .
PHYSICAL REVIEW B, 1973, 7 (12) :5212-5215