THE INTRODUCTION OF MISFIT DISLOCATIONS IN HGCDTE EPITAXIAL LAYERS

被引:30
作者
BASSON, JH
BOOYENS, H
机构
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 80卷 / 02期
关键词
D O I
10.1002/pssa.2210800231
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:663 / 668
页数:6
相关论文
共 50 条
[21]   Doping control in HgCdTe epitaxial layers [J].
Madejczyk, P ;
Kubiak, L ;
Gawron, W .
SOLID STATE CRYSTALS 2002: CRYSTALLINE MATERIALS FOR OPTOELECTRONICS, 2003, 5136 :416-423
[22]   HOMOGENEOUS NUCLEATION OF MISFIT DISLOCATIONS IN STRAINED LAYERS [J].
PARK, HH ;
LEE, JY .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (6A) :3409-3414
[23]   Screw misfit dislocations in soft substrates of epitaxial heterostructures [J].
Gumen, L ;
Feldman, E ;
Yurchenko, V ;
Krokhin, A .
PHILOSOPHICAL MAGAZINE, 2004, 84 (32) :3427-3438
[24]   MISFIT ACCOMMODATION BY IMPERFECT DISLOCATIONS IN EPITAXIAL FCC FILMS [J].
JESSER, WA .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) :39-&
[25]   Structure and formation of misfit dislocations in an epitaxial fcc film [J].
Zhou, NG ;
Zhou, L ;
Du, DX .
ACTA PHYSICA SINICA, 2006, 55 (01) :372-377
[26]   MISFIT DISLOCATIONS IN EPITAXIAL THIN-FILM GROWTH [J].
HONJO, G .
THIN SOLID FILMS, 1976, 32 (01) :143-150
[27]   Equilibrium position of misfit dislocations in thin epitaxial films [J].
Wu, X ;
Weatherly, GC .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (04) :307-311
[28]   Interaction of threading and misfit dislocations in a strained epitaxial layer [J].
Schwarz, KW ;
Tersoff, J .
APPLIED PHYSICS LETTERS, 1996, 69 (09) :1220-1222
[29]   DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].
MATTHEWS, JW ;
BLAKESLEE, AE .
JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :118-125
[30]   Misfit dislocations in epitaxial heterostructures: Mechanisms of generation and multiplication [J].
Vdovin, VI .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1999, 171 (01) :239-250