REACTIVE ION ETCHING RELATED SI SURFACE RESIDUES AND SUBSURFACE DAMAGE - THEIR RELATIONSHIP TO FUNDAMENTAL ETCHING MECHANISMS

被引：98

作者：

OEHRLEIN, GS

LEE, YH

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.574569

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1585 / 1594

页数：10

共 31 条

[1] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J].

COBURN, JW ;

WINTERS, HF .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3189-3196

[2] INSITU AUGER-ELECTRON SPECTROSCOPY OF SI AND SIO2 SURFACES PLASMA ETCHED IN CF4-H2 GLOW-DISCHARGES [J].

COBURN, JW .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) :5210-5213

[3] OPTICAL-EMISSION SPECTROSCOPY OF REACTIVE PLASMAS - A METHOD FOR CORRELATING EMISSION INTENSITIES TO REACTIVE PARTICLE DENSITY [J].

COBURN, JW ;

CHEN, M .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3134-3136

[4]

COBURN JW, 1982, PLASMA ETCHING REACT

[5] FORMATION OF A SILICON-CARBIDE LAYER DURING CF4/H2 DRY ETCHING OF SI [J].

COYLE, GJ ;

OEHRLEIN, GS .

APPLIED PHYSICS LETTERS, 1985, 47 (06) :604-606

[6] MECHANISMS OF POLYMERIZATION IN DISCHARGES OF FLUOROCARBONS [J].

DAGOSTINO, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06) :2627-2628

[7] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2 [J].

EPHRATH, LM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) :1419-1421

[8] PARAMETER AND REACTOR DEPENDENCE OF SELECTIVE OXIDE RIE IN CF4+H2 [J].

EPHRATH, LM ;

PETRILLO, EJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) :2282-2287

[9]

Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]

[10] THE REACTION OF FLUORINE-ATOMS WITH SILICON [J].

FLAMM, DL ;

DONNELLY, VM ;

MUCHA, JA .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3633-3639

← 1 2 3 4 →