ORIGIN OF THE ESR SIGNAL WITH G=2.0055 IN AMORPHOUS-SILICON

被引：22

作者：

ISHII, N ^{[1
]}

SHIMIZU, T ^{[1
]}

机构：

[1] KANAZAWA UNIV,FAC TECHNOL,DEPT ELECTR,KANAZAWA,ISHIKAWA 920,JAPAN

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.42.9697

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Defect-state wave functions for threefold- and fivefold-coordinated Si atoms in amorphous silicon clusters have been calculated with use of a first-principles linear combination of the atomic orbitals method in order to clarify the origin of the ESR signal with g=2.0055 in amorphous silicon. The wave function of the defect state originating from the threefold-coordinated Si atom is strongly localized on this atom. On the other hand, that for the fivefold-coordinated Si atom is extended on this atom and its nearest neighbors. By comparing these results with the observed hyperfine structure of the ESR signal, we conclude that the origin of this ESR signal is the threefold-coordinated Si atoms. © 1990 The American Physical Society.

引用

页码：9697 / 9700

页数：4

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