LIQUID-PHASE EPITAXIAL-GROWTH OF INGAASSB ON (111)B INAS

被引：43

作者：

SANKARAN, R ^{[1
]}

ANTYPAS, GA ^{[1
]}

机构：

[1] VARIAN ASSOC,CORP SOLID STATE LAB,PALO ALTO,CA 94303

来源：

JOURNAL OF CRYSTAL GROWTH | 1976年 / 36卷 / 02期

关键词：

D O I：

10.1016/0022-0248(76)90278-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：198 / 204

页数：7

共 13 条

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[3] GROWTH AND CHARACTERIZATION OF GAASSB-GAALASSB LATTICE-MATCHED HETEROJUNCTIONS [J].

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[6] MELT REMOVAL AND PLANAR GROWTH OF IN-1-XGA-XP-1-XAS-Z HETEROJUNCTIONS [J].

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[7]

Dolginov L. M., 1976, Soviet Journal of Quantum Electronics, V6, P507, DOI 10.1070/QE1976v006n04ABEH011205

[8]

Gratton M. F., 1973, Journal of Electronic Materials, V2, P455, DOI 10.1007/BF02660149

[9] NEW GRADING LAYER FOR LIQUID EPITAXIAL-GROWTH OF GAXIN1-XAS ON GAAS SUBSTRATE [J].

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[10]

NELSON H, 1963, RCA REV, V24, P603

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