VERY LOW-THRESHOLD DOUBLE-HETEROJUNCTION ALX GA1-X AS INJECTION LASERS

被引：23

作者：

ETTENBERG, M ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

APPLIED PHYSICS LETTERS | 1975年 / 27卷 / 12期

关键词：

D O I：

10.1063/1.88351

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：652 / 654

页数：3

共 11 条

[1] THERMAL-CONDUCTIVITY OF GA1-XALXAS ALLOYS [J].

AFROMOWITZ, MA .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1292-1294

[2]

[Anonymous], COMMUNICATION, P2490

[3] THRESHOLD REDUCTION BY ADDITION OF PHOSPHORUS TO TERNARY LAYERS OF DOUBLE-HETEROSTRUCTURE GAAS LASERS [J].

DYMENT, JC ;

NASH, FR ;

HWANG, CJ ;

ROZGONYI, GA ;

HARTMAN, RL ;

MARCOS, HM ;

HASZKO, SE .

APPLIED PHYSICS LETTERS, 1974, 24 (10) :481-484

[4]

ETTENBERG M, 1975, 17TH AIME C PREP PRO

[5]

KRESSEL H, 1972, LASER HDB

[6]

LOCKWOOD HF, 1974, J CRYST GROWTH, V27, P97

[7] THIN SOLUTION MULTIPLE LAYER EPITAXY [J].

LOCKWOOD, HF ;

ETTENBERG, M .

JOURNAL OF CRYSTAL GROWTH, 1972, 15 (01) :81-+

[8]

PANISH MB, 1974, APPLIED SOLID STATE, V4

[9] TE AND GE - DOPING STUDIES IN GA1-XA1XAS [J].

SPRINGTHORPE, AJ ;

KING, FD ;

BECKE, A .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (01) :101-118

[10] LOW THRESHOLD-CURRENT DENSITY IN 5-LAYER-HETEROSTRUCTURE (GAAL)AS/GAAS LOCALIZED-GAIN-REGION INJECTION LASERS [J].

THOMPSON, GH ;

KIRKBY, PA .

ELECTRONICS LETTERS, 1973, 9 (13) :295-296

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