BARRIER TO MIGRATION OF THE SILICON SELF-INTERSTITIAL

被引：142

作者：

BARYAM, Y

JOANNOPOULOS, JD

机构：

来源：

PHYSICAL REVIEW LETTERS | 1984年 / 52卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.52.1129

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1129 / 1132

页数：4

共 10 条

[1] THEORY OF ENHANCED MIGRATION OF INTERSTITIAL ALUMINUM IN SILICON [J].

BARAFF, GA ;

SCHLUTER, M ;

ALLAN, G .

PHYSICAL REVIEW LETTERS, 1983, 50 (10) :739-742

[2] NEW MECHANISM FOR INTERSTITIAL MIGRATION [J].

BOURGOIN, JC ;

CORBETT, JW .

PHYSICS LETTERS A, 1972, A 38 (02) :135-&

[3]

BOURGOIN JC, 1975, I PHYS C SER, V23, P149

[4] NORM-CONSERVING PSEUDOPOTENTIALS [J].

HAMANN, DR ;

SCHLUTER, M ;

CHIANG, C .

PHYSICAL REVIEW LETTERS, 1979, 43 (20) :1494-1497

[5] MOMENTUM-SPACE FORMALISM FOR THE TOTAL ENERGY OF SOLIDS [J].

IHM, J ;

ZUNGER, A ;

COHEN, ML .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (21) :4409-4422

[6]

NARAYAN J, 1981, DEFECTS SEMICONDUCTO

[7] MULTIVACANCIES, INTERSTITIALS, AND SELF-INTERSTITIAL MIGRATION IN SILICON [J].

PANTELIDES, ST ;

IVANOV, I ;

SCHEFFLER, M ;

VIGNERON, JP .

PHYSICA B & C, 1983, 116 (1-3) :18-27

[8]

Watkins G.D., 1975, Lattice Defects in Semiconductors 1974, V23, P1

[9] PROPERTIES OF INTERSTITIAL IN DIAMOND-TYPE LATTICE [J].

WATKINS, GD ;

MESSMER, RP ;

WEIGEL, C ;

PEAK, D ;

CORBETT, JW .

PHYSICAL REVIEW LETTERS, 1971, 27 (23) :1573-&

[10]

WATKINS GD, 1979, I PHYSICS C SERIES, V46, P16

← 1 →