ON THE SMALL-SIGNAL BEHAVIOR OF THE MOS-TRANSISTOR IN QUASISTATIC OPERATION

被引：44

作者：

TURCHETTI, C ^{[1
]}

MASETTI, G ^{[1
]}

TSIVIDIS, Y ^{[1
]}

机构：

[1] COLUMBIA UNIV,DEPT ELECT ENGN,NEW YORK,NY 10027

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 10期

关键词：

D O I：

10.1016/0038-1101(83)90070-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：941 / 949

页数：9

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[8] A GENERAL 4-TERMINAL CHARGING-CURRENT MODEL FOR THE INSULATED-GATE FIELD-EFFECT TRANSISTOR .1. [J].

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BOOTHROYD, AR .

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[9]

TSIVIDIS Y, 1982, SOLID STATE ELECTRON, V25, P1099, DOI 10.1016/0038-1101(82)90148-4

[10] RELATION BETWEEN INCREMENTAL INTRINSIC CAPACITANCES AND TRANSCONDUCTANCES IN MOS-TRANSISTORS [J].

TSIVIDIS, YP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (05) :946-948

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