OBSERVATION OF DEEP LEVELS ASSOCIATED WITH THE GAAS ALXGA1-X AS INTERFACE GROWN BY MOLECULAR-BEAM EPITAXY

被引：53
作者：
MCAFEE, SR
LANG, DV
TSANG, WT
机构：
来源：
APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 06期
关键词：
D O I：
10.1063/1.93164
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：520 / 522
页数：3
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