OBSERVATION OF WANNIER-STARK LOCALIZATION BY ELECTROREFLECTANCE SPECTROSCOPY

被引：9
|
作者：
GIBB, K
DIGNAM, MM
SIPE, JE
ROTH, AP
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
[2] UNIV TORONTO,DEPT PHYS,TORONTO M5S 1A7,ONTARIO,CANADA
来源：
PHYSICAL REVIEW B | 1993年 / 48卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.48.8156
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Wannier-Stark localization in strained-layer InxGa1-xAs-GaAs superlattices is measured using electroreflectance (ER) spectroscopy at 4.5 K. Analysis of the ER data reveals third-derivative line shapes for two samples biased near flat band, which become more first-derivative-like at high applied fields. The exciton transition energies obtained from the line-shape analysis are in good agreement with both photocurrent measurements and exciton Stark ladder calculations for fields greater than 5 kV cm-1. The flat-band ER spectra of the two superlattices reveal distinct features due to their finite sizes, not predicted by the Kronig-Penney model.
引用
收藏
页码：8156 / 8160
页数：5
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