SIMS EVALUATION OF CONTAMINATION ON ION-CLEANED (100) INP SUBSTRATES

被引:21
作者
DOWSETT, MG [1 ]
KING, RM [1 ]
PARKER, EHC [1 ]
机构
[1] SIR JOHN CASS SCH SCI & TECHNOL,DEPT PHYS,LONDON EC3N 2EY,ENGLAND
关键词
D O I
10.1063/1.89765
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:529 / 531
页数:3
相关论文
共 13 条
[1]   COMPOSITIONAL AND STRUCTURAL-CHANGES THAT ACCOMPANY THERMAL ANNEALING OF (100) SURFACES OF GAAS, INP AND GAP IN VACUUM [J].
BAYLISS, CR ;
KIRK, DL .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (02) :233-&
[2]   DEVELOPMENTS IN SECONDARY ION MASS-SPECTROSCOPY AND APPLICATIONS TO SURFACE STUDIES [J].
BENNINGHOVEN, A .
SURFACE SCIENCE, 1975, 53 (DEC) :596-625
[3]   MODIFICATION OF EXISTING APPARATUS FOR SIMS IN UHV [J].
DOWSETT, MG ;
KING, RM ;
PARKER, EHC .
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1975, 8 (08) :704-708
[4]  
DOWSETT MG, UNPUBLISHED
[5]   GROWTH OF INDIUM-PHOSPHIDE FILMS FROM IN AND P2 BEAMS IN ULTRAHIGH-VACUUM [J].
FARROW, RFC .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (11) :L121-L124
[6]  
FARROW RL, COMMUNICATION
[7]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF INP [J].
MATSUSHIMA, Y ;
HIROFUJI, Y ;
GONDA, S ;
MUKAI, S ;
KIMATA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (12) :2321-2325
[8]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF INP [J].
MCFEE, JH ;
MILLER, BI ;
BACHMANN, KJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) :259-272
[9]  
MEGGITT BT, UNPUBLISHED
[10]   COMPOSITION OF BINARY-ALLOYS BY SIMULTANEOUS SIMS AND AES MEASUREMENTS [J].
NARUSAWA, T ;
SATAKE, T ;
KOMIYA, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :514-518