THE INFLUENCE OF THE INTERFACE STATE ON THE PROPERTIES OF SOLAR-CELL SEMICONDUCTOR ELECTRODES

被引：0

作者：

LIN, ZD

ZHOU, PZ

CHEN, YQ

DENG, HG

QI, SX

WANG, CH

XIE, K

机构：

来源：

CHINESE PHYSICS | 1983年 / 3卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：36 / 44

页数：9

共 7 条

[1]

Gerischer H., 1979, Solar energy conversion. Solid-state physics aspects, P115

[2] SEMICONDUCTOR ELECTRODES .5. APPLICATION OF CHEMICALLY VAPOR-DEPOSITED IRON-OXIDE FILMS TO PHOTOSENSITIZED ELECTROLYSIS [J].

HARDEE, KL ;

BARD, AJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (07) :1024-1026

[3]

MAVROIDES JG, 1978, MAT RES B, V13, P1378

[4]

Sharma B.L., 1974, SEMICONDUCTOR HETERO

[5] NEW AND UNIFIED MODEL FOR SCHOTTKY-BARRIER AND III-V INSULATOR INTERFACE STATES FORMATION [J].

SPICER, WE ;

CHYE, PW ;

SKEATH, PR ;

SU, CY ;

LINDAU, I .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1422-1433

[6] UNIFIED DEFECT MODEL AND BEYOND [J].

SPICER, WE ;

LINDAU, I ;

SKEATH, P ;

SU, CY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1019-1027

[7]

VANRUYVEN LJ, 1964, THESIS TH EINDHOVEN

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