DIFFUSIVITY OF IMPLANTED CHLORINE ATOMS IN THERMAL OXIDES ON SILICON

被引：3

作者：

VENGURLEKAR, AS ^{[1
]}

RAMANATHAN, KV ^{[1
]}

KARULKAR, VT ^{[1
]}

SALVI, VP ^{[1
]}

机构：

[1] UNIV BOMBAY,DEPT PHYS,BOMBAY 400098,INDIA

来源：

关键词：

D O I：

10.1149/1.2114053

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1172 / 1177

页数：6

共 21 条

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