LOW-ENERGY ION-SCATTERING SPECTROMETRY (ISS) OF SIO2-SI INTERFACE

被引：78

作者：

HARRINGTON, WL ^{[1
]}

HONIG, RE ^{[1
]}

GOODMAN, AM ^{[1
]}

WILLIAMS, R ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

APPLIED PHYSICS LETTERS | 1975年 / 27卷 / 12期

关键词：

D O I：

10.1063/1.88345

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：644 / 645

页数：2

共 10 条

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[2]

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[4] THIN TUNNELABLE LAYERS OF SILICON DIOXIDE FORMED BY OXIDATION OF SILICON [J].

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[5]

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[6]

JOHANNESSEN JS, 1975, P ARPA NBS WORKSHOP

[7] STOICHIOMETRY OF THIN SILICON-OXIDE LAYERS ON SILICON [J].

SIGMON, TW ;

CHU, WK ;

LUGUJJO, E ;

MAYER, JW .

APPLIED PHYSICS LETTERS, 1974, 24 (03) :105-107

[8] SCATTERING OF LOW-ENERGY NOBLE GAS IONS FROM METAL SURFACES [J].

SMITH, DP .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (01) :340-+

[9]

SMITH DP, 1967, 15TH P ANN C MASS SP

[10] WETTING OF THIN-LAYERS OF SIO2 BY WATER [J].

WILLIAMS, R ;

GOODMAN, AM .

APPLIED PHYSICS LETTERS, 1974, 25 (10) :531-532

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