THIN-FILM INTERACTIONS IN SI/SIO2/W-TI/AL-1-PERCENT SI SYSTEM

被引：27

作者：

CHANG, PH ^{[1
]}

LIU, HY ^{[1
]}

KEENAN, JA ^{[1
]}

ANTHONY, JM ^{[1
]}

BOHLMAN, JG ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 06期

关键词：

D O I：

10.1063/1.339459

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2485 / 2491

页数：7

共 11 条

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[8] AL/TIW REACTION-KINETICS - INFLUENCE OF CU AND INTERFACE OXIDES [J].

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[9]

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[10] DIFFUSION BARRIER PROPERTIES OF THIN SELECTIVE CHEMICAL VAPOR-DEPOSITED TUNGSTEN FILMS [J].

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