Luminescent properties of ZnSXSe(l-X) mixed crystals obtained by solid-phase synthesis and melt-growing

The luminescence characteristics of ZnSXSe(l-X) mixed crystals (MC) obtained by solid phase synthesis and melt-growing were studied. In X-ray luminescence spectra of ZnS(X)Se((l-X))powdered MC synthesized from ZnS and ZnSe powders, where x = 0.90 to 0.99, a non -elementary band with lambda(max) similar to 520 nm (I-1) was observed, but for ZnSXSe(l-X) with low concentrations of ZnS (x = 0.05) the luminescence band with lambda(max) = 600-630 nm (I-2) was a dominate. In X-ray luminescence spectra of ZnSXSe(l-X) MC (x = 0.05 to 0.3) obtained by the melt growth only I-2 luminescence band with shifted maximum from 610 nm to 590 nm at sulfur concentration increasing was observed. It is shown that for the composition of ZnS0.15Se0.85 MC annealed in zinc vapor the light yield of X-ray luminescence is 1.6 times higher than in the commercial ZnSe(Te) crystals. In consideration of this fact it might be supposed, that this MC can find application in scintillation detectors of X-ray and low-energy gamma radiation.