THERMAL OXIDATION OF SILICON

被引：14
作者：
YEH, TH
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1962年 / 33卷 / 09期
关键词：
D O I：
10.1063/1.1702564
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2849 / &
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