THERMAL OXIDATION OF SILICON

被引:14
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YEH, TH
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10.1063/1.1702564
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O59 [应用物理学];
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页码:2849 / &
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[21]   TRANSPORT PROCESSES IN THERMAL OXIDATION OF SILICON [J].
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (08) :782-+
[22]   THERMAL OXIDATION OF HEAVILY DOPED SILICON [J].
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[25]   RAPID THERMAL OXIDATION OF SILICON. [J].
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[26]   RAPID THERMAL-OXIDATION OF SILICON [J].
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[30]   New theory of the thermal oxidation of silicon [J].
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