A SCALEABLE TECHNIQUE FOR THE MEASUREMENT OF INTRINSIC MOS CAPACITANCE WITH ATTO-FARAD RESOLUTION

被引：13
作者：
IWAI, H [1 ]
ORISTIAN, JE [1 ]
WALKER, JT [1 ]
DUTTON, RW [1 ]
机构：
[1] STANFORD UNIV, INTEGRATED CIRCUITS LAB, STANFORD, CA 94305 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 02期
关键词：
D O I：
10.1109/T-ED.1985.21948
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：344 / 356
页数：13
相关论文
共 63 条
[1]   THRESHOLD VOLTAGE MODELS OF SHORT, NARROW AND SMALL GEOMETRY MOSFETS - A REVIEW [J].
AKERS, LA ;
SANCHEZ, JJ .
SOLID-STATE ELECTRONICS, 1982, 25 (07) :621-641
[2]  
ATKINSON KE, 1978, INTRO NUMERICAL ANAL, P43
[3]   DRAIN VOLTAGE LIMITATIONS OF MOS-TRANSISTORS [J].
BATEMAN, IM ;
ARMSTRONG, GA ;
MAGOWAN, JA .
SOLID-STATE ELECTRONICS, 1974, 17 (06) :539-550
[4]   AN 8-CHANNEL 8 BIT MICROPROCESSOR COMPATIBLE NMOS D-A CONVERTER WITH PROGRAMMABLE SCALING [J].
BIENSTMAN, LA ;
DEMAN, HJ .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (06) :1051-1059
[5]  
BREWS JR, 1981, SILICON INTEGRATED A, P60
[6]   BRIDGE AND VAN-DER-PAUW SHEET RESISTORS FOR CHARACTERIZING LINE-WIDTH OF CONDUCTING LAYERS [J].
BUEHLER, MG ;
GRANT, SD ;
THURBER, WR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) :650-654
[7]  
BURNS JR, 1969, RCA REV, V30, P15
[8]  
COBBOLD RSC, 1970, THEORY APPLICATIONS, P243
[9]  
COBBOLD RSC, 1970, THEORY APPLICATIONS, P272
[10]   P-CHANNEL VERSUS N-CHANNEL IN MOS-ICS OF SUB-MICRON CHANNEL LENGTHS [J].
DANG, LM ;
IWAI, H ;
NISHI, Y ;
TAGUCHI, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :107-112
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