KA-BAND MONOLITHIC LOW-NOISE AMPLIFIER USING DIRECT ION-IMPLANTED GAAS-MESFETS

被引：3

作者：

FENG, M

SCHERRER, DR

APOSTOLAKIS, PJ

MIDDLETON, JR

MCPARTLIN, MJ

LAUTERWASSER, BD

OLIVER, JD

机构：

[1] Department of Electrical and Computer Engineering, Center for Compound Semiconductor Microelectronics, University of Illinois.

[2] Advanced Device Center, Raytheon Company, Andover

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1995年 / 5卷 / 05期

关键词：

D O I：

10.1109/75.374083

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ka-band monolithic low-noise amplifiers using low cost direct ion-implanted GaAs MESFET's with 0.25 mu m ''T''-gates have been developed for use at 27 to 34 GHz. The five stage MMIC amplifier is designed based on 50% Idss self-biasing using a single power supply, These amplifiers achieved 2-3 dB noise figure with 30 dB associated gain at 33 GHz, These results, using low cost ion implantation techniques, rival the best GaAs p-HEMT MMIC results to date.

引用

页码：156 / 158

页数：3

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