OPTICAL STUDY OF INTERDIFFUSION IN CDTE AND ZNSE BASED QUANTUM-WELLS

被引：17

作者：

TONNIS, D ^{[1
]}

BACHER, G ^{[1
]}

FORCHEL, A ^{[1
]}

WAAG, A ^{[1
]}

LITZ, T ^{[1
]}

HOMMEL, D ^{[1
]}

BECKER, C ^{[1
]}

LANDWEHR, G ^{[1
]}

HEUKEN, M ^{[1
]}

SCHOLL, M ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST HALBLEITERTECH,LEHRSTUH 1,D-52062 AACHEN,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 138卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)90834-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The interdiffusion in single quantum well structures was studied for a variety of II-VI semiconductor materials based on CdTe and ZnSe. In particular we have investigated CdTe/CdMnTe, CdTe/CdMgTe, HgxCd1-xTe/Hgy Cd1-yTe and ZnSe/CdZnSe structures in which an intermixing of column II elements can be induced as well as ZnSe/ZnSSe allowing an interdiffusion within the column VI sublattice. The diffusion was induced by rapid thermal annealing (RTA) for 1 min at different temperatures. The resulting blue shift of the characteristic emission spectrum was analyzed using photoluminescence spectroscopy. We observed a significant difference of the diffusion behavior between both groups of materials. While in all three CdTe based material systems an almost complete interdiffusion within the column II sublattice could be obtained at a high optical quality of the structures, both ZnSe based quantum wells show only remarkably small diffusion lengths. For all three CdTe based quantum wells we derived an activation energy of the interdiffusion process from a simple Fickian diffusion model applied to our measurements. We obtained a value of 2.8 eV for CdTe/CdMnTe and CdTe/CdMgTe and a value 2.1 eV for HgxCd1-xTe/HgyCd1-yTe.

引用

页码：362 / 366

页数：5

共 12 条

[1] WAVELENGTH MODIFICATION OF ALXGA1-XAS QUANTUM WELL HETEROSTRUCTURE LASERS BY LAYER INTERDIFFUSION [J].

CAMRAS, MD ;

HOLONYAK, N ;

BURNHAM, RD ;

STREIFER, W ;

SCIFRES, DR ;

PAOLI, TL ;

LINDSTROM, C .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) :5637-5641

[2] ZINC BLENDE TYPE HGTE-MNTE SOLID SOLUTIONS .1. [J].

DELVES, RT ;

LEWIS, B .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (04) :549-&

[3] ANNEALING EFFECT ON THE SHAPE OF CDTE/ZNTE QUANTUM-WELLS [J].

HAMOUDI, A ;

LIGEON, E ;

SAMINADAYAR, K ;

CIBERT, J ;

DANG, LS ;

TATARENKO, S .

APPLIED PHYSICS LETTERS, 1992, 60 (22) :2797-2799

[4] CHEMICAL DIFFUSION OF HG IN CDTE [J].

HOGG, JHC ;

BAIRSTOW, A ;

MATTHEWS, GW ;

SHAW, D ;

STEDMAN, JD .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 16 (1-3) :195-198

[5] MASS AND DOSE DEPENDENCE OF ION-IMPLANTATION-INDUCED INTERMIXING OF GAAS GAALAS QUANTUM-WELL STRUCTURES [J].

LEIER, H ;

FORCHEL, A ;

HORCHER, G ;

HOMMEL, J ;

BAYER, S ;

ROTHFRITZ, H ;

WEIMANN, G ;

SCHLAPP, W .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (04) :1805-1813

[6] EXACT SOLUTION OF THE SCHRODINGER-EQUATION ACROSS AN ARBITRARY ONE-DIMENSIONAL PIECEWISE-LINEAR POTENTIAL BARRIER [J].

LUI, WW ;

FUKUMA, M .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) :1555-1559

[7]

MADELUNG O, 1982, LANDOLTBORNSTEIN

[8]

MADELUNG O, 1987, LANDOLTBORNSTEIN

[9] DIFFUSION MECHANISMS IN II-VI MATERIALS [J].

SHAW, D .

JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :778-796

[10] INTERDIFFUSION STUDIES IN CDTE/HGTE SUPERLATTICES [J].

TARDOT, A ;

HAMOUDI, A ;

MAGNEA, N ;

GENTILE, P ;

PAUTRAT, JL .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (01) :S276-S280

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