PULSED LASER-INDUCED PHOTOCHEMICAL DECOMPOSITION OF GAAS(110) STUDIED WITH TIME-RESOLVED PHOTOELECTRON-SPECTROSCOPY USING SYNCHROTRON RADIATION

被引：34

作者：

LONG, JP

GOLDENBERG, SS

KABLER, MN

机构：

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.68.1014

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Cleaved GaAs surfaces decompose under weak pulsed-laser irradiation, leading to the formation of metallic Ga islands. The reduction of band-bending nonuniformities in photoemission spectra acquired during the laser pulses, in concert with new core-level fitting techniques which treat broadened spectra, permits a detailed analysis. A decomposition rate consistent with a two-step photochemical excitation process is measured. The surface remains largely intact on an atomic scale, but is increasingly unable to support excited surface states as decomposition proceeds.

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页码：1014 / 1017

页数：4

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