PROCESS DEPENDENCE OF HOLE TRAPPING IN THIN NITRIDED SIO2-FILMS

被引：16

作者：

SEVERI, M ^{[1
]}

DORI, L ^{[1
]}

IMPRONTA, M ^{[1
]}

GUERRI, S ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 11期

关键词：

D O I：

10.1109/16.43665

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2447 / 2451

页数：5

共 30 条

[11] SHORT-TERM AND LONG-TERM RELIABILITY OF NITRIDED OXIDE MISFETS [J].

KAGA, T ;

HAGIWARA, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) :929-934

[12] GENERATION OF OXIDE CHARGE AND INTERFACE STATES BY IONIZING-RADIATION AND BY TUNNEL INJECTION EXPERIMENTS [J].

KNOLL, M ;

BRAUNIG, D ;

FAHRNER, WR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :1471-1478

[13] HYDROGENATION DURING THERMAL NITRIDATION OF SILICON DIOXIDE [J].

KUIPER, AET ;

WILLEMSEN, MFC ;

THEUNISSEN, AML ;

VANDEWIJGERT, WM ;

HABRAKEN, FHPM ;

TIJHAAR, RHG ;

VANDERWEG, WF ;

CHEN, JT .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) :2765-2772

[14] MOBILITY DEGRADATION OF NITRIDED OXIDE MISFETS [J].

KUSAKA, T ;

HIRAIWA, A ;

MUKAI, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (01) :166-172

[15]

Lai S. K., 1983, International Electron Devices Meeting 1983. Technical Digest, P190

[16] INTERFACE TRAP GENERATION IN SILICON DIOXIDE WHEN ELECTRONS ARE CAPTURED BY TRAPPED HOLES [J].

LAI, SK .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2540-2546

[17] EFFECTS OF AMMONIA ANNEAL ON ELECTRON TRAPPINGS IN SILICON DIOXIDE [J].

LAI, SK ;

DONG, DW ;

HARTSTEIN, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) :2042-2044

[18] ELECTRON AND HOLE TRAPS IN SIO2-FILMS THERMALLY GROWN ON SI SUBSTRATES IN ULTRA-DRY OXYGEN [J].

MIKI, H ;

NOGUCHI, M ;

YOKOGAWA, K ;

KIM, BW ;

ASADA, K ;

SUGANO, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) :2245-2252

[19]

MOSLEHI MM, 1986, 5TH P INT S SIL MAT, P379

[20] STUDY OF THE ATOMIC MODELS OF 3 DONOR-LIKE TRAPS ON OXIDIZED SILICON WITH ALUMINUM GATE FROM THEIR PROCESSING DEPENDENCES [J].

SAH, CT ;

SUN, JYC ;

TZOU, JJT .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) :5864-5879

← 1 2 3 →