PROCESS DEPENDENCE OF HOLE TRAPPING IN THIN NITRIDED SIO2-FILMS

被引：16

作者：

SEVERI, M ^{[1
]}

DORI, L ^{[1
]}

IMPRONTA, M ^{[1
]}

GUERRI, S ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 11期

关键词：

D O I：

10.1109/16.43665

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2447 / 2451

页数：5

共 30 条

[1] AVALANCHE INJECTION OF HOLES INTO SIO2 [J].

AITKEN, JM ;

YOUNG, DR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) :2128-2134

[2] COMMON ORIGIN FOR ELECTRON AND HOLE TRAPS IN MOS DEVICES [J].

ASLAM, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) :2535-2539

[3]

ASLAM M, 1984, SOLID STATE ELECTRON, V27, P709

[4] CAPTURE AND TUNNEL EMISSION OF ELECTRONS BY DEEP LEVELS IN ULTRATHIN NITRIDED OXIDES ON SILICON [J].

CHANG, ST ;

JOHNSON, NM ;

LYON, SA .

APPLIED PHYSICS LETTERS, 1984, 44 (03) :316-318

[5] THRESHOLD-VOLTAGE INSTABILITY IN MOSFETS DUE TO CHANNEL HOT-HOLE EMISSION [J].

FAIR, RB ;

SUN, RC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) :83-94

[6]

FISCHETTI M, 1986, P INSULATING FILMS S, P181

[7] TIME-DEPENDENT COMPOSITIONAL VARIATION IN SIO2-FILMS NITRIDED IN AMMONIA [J].

HAN, CJ ;

MOSLEHI, MM ;

HELMS, CR ;

SARASWAT, KC .

APPLIED PHYSICS LETTERS, 1985, 46 (07) :641-643

[8] HOLE TRAPPING IN SIO2-FILMS ANNEALED IN LOW-PRESSURE OXYGEN ATMOSPHERE [J].

HOFMANN, K ;

YOUNG, DR ;

RUBLOFF, GW .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) :925-930

[9] CHARGE-TRAPPING PROPERTIES OF ULTRATHIN NITRIDED OXIDES PREPARED BY RAPID THERMAL ANNEALING [J].

HORI, T ;

IWASAKI, H ;

TSUJI, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) :904-910

[10] ADVANTAGES OF THERMAL NITRIDE AND NITROXIDE GATE FILMS IN VLSI PROCESS [J].

ITO, T ;

NAKAMURA, T ;

ISHIKAWA, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :498-502

← 1 2 3 →