VISIBLE-LIGHT EMISSION FROM REVERSE BIASED AMORPHOUS-SILICON CARBIDE P-I-N STRUCTURES

被引:1
作者
ALVAREZ, F
FRAGNITO, HL
PRIETO, P
CHAMBOULEYRON, I
机构
关键词
D O I
10.1016/0022-3093(87)90316-4
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
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页码:1319 / 1322
页数:4
相关论文
共 3 条
[1]   PHOTOELECTRONIC PROPERTIES OF AMORPHOUS-SILICON NITRIDE COMPOUNDS [J].
ALVAREZ, F ;
CHAMBOULEYRON, I .
SOLAR ENERGY MATERIALS, 1984, 10 (02) :151-170
[2]   A STUDY OF VISIBLE-LIGHT INJECTION-ELECTROLUMINESCENCE IN A-SIC/P-I-N DIODE [J].
KRUANGAM, D ;
ENDO, T ;
WEI, GP ;
NONOMURA, S ;
OKAMOTO, H ;
HAMAKAWA, Y .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :1429-1432
[3]   RECOMBINATION IN PLASMA-DEPOSITED AMORPHOUS SI-H - LUMINESCENCE DECAY [J].
TSANG, C ;
STREET, RA .
PHYSICAL REVIEW B, 1979, 19 (06) :3027-3040