STUDY OF THE ATOMIC MODELS OF 3 DONOR-LIKE TRAPS ON OXIDIZED SILICON WITH ALUMINUM GATE FROM THEIR PROCESSING DEPENDENCES

被引：79

作者：

SAH, CT ^{[1
]}

SUN, JYC ^{[1
]}

TZOU, JJT ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 10期

关键词：

D O I：

10.1063/1.331760

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5864 / 5879

页数：16

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