THEORY OF INSULATED-GATE FIELD-EFFECT TRANSISTORS NEAR AND BEYOND PINCH-OFF

被引：41
作者：
GEURST, JA
机构：
来源：
SOLID-STATE ELECTRONICS | 1966年 / 9卷 / 02期
关键词：
D O I：
10.1016/0038-1101(66)90084-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：129 / +
页数：1
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