O-90GHZ INALAS/INGAAS/INP HEMT DISTRIBUTED BASEBAND AMPLIFIER IC

被引：32

作者：

KIMURA, S

IMAI, Y

UMEDA, Y

ENOKI, T

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa, 243-01

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 17期

关键词：

DISTRIBUTED AMPLIFIERS; HIGH ELECTRON MOBILITY TRANSISTORS;

D O I：

10.1049/el:19951032

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An InAlAs/InGaAs/InP HEMT distributed baseband amplifier IC that uses a new loss compensation technique for the drain artificial line is described. The amplifier IC has a gain of 10 dB with a 0-90 GHz bandwidth. This is the widest bandwidth among all reported baseband amplifier ICs to date.

引用

页码：1430 / 1431

页数：2

共 3 条

[1] ATTENUATION COMPENSATION IN DISTRIBUTED-AMPLIFIER DESIGN [J].

DEIBELE, S ;

BEYER, JB .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1989, 37 (09) :1425-1433

[2] 5-100 GHZ INP COPLANAR WAVE-GUIDE MMIC DISTRIBUTED-AMPLIFIER [J].

MAJIDIAHY, R ;

NISHIMOTO, CK ;

RIAZIAT, M ;

GLENN, M ;

SILVERMAN, S ;

WENG, SL ;

PAO, YC ;

ZDASIUK, GA ;

BANDY, SG ;

TAN, ZCH .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1990, 38 (12) :1986-1993

[3]

UMEDA Y, 1992, IEICE T ELECTRON, VE75C, P649

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