CARBON ION-IMPLANTATION IN GAAS

被引：0

作者：

HARA, T ^{[1
]}

TAKEDA, S ^{[1
]}

MOCHIZUKI, A ^{[1
]}

OIKAWA, H ^{[1
]}

HIGASHISAKA, A ^{[1
]}

KOHZU, H ^{[1
]}

机构：

[1] NEC CORP LTD, ULTRA LARGE SCALE INTEGRAT DEVICE DEV LABS, OTSU, SHIGA 520, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 8B期

关键词：

ION IMPLANTATION; GALLIUM ARSENIDE; CARRIER CONCENTRATION PROFILE; RESIDUAL DAMAGE;

D O I：

10.1143/JJAP.34.L1020

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atom and carrier concentration profiles in carbon-ion-implanted GaAs have been measured. Ion implantation of carbon is performed at 300 keV with dose of 1.0 x 10(14) ions/cm(2). Carbon concentration profile obtained by secondary ion mass spectrometry measurement is in good agreement with the profile obtained by Monte Carlo simulation. The implanted carbon does not diffuse markedly with annealing at 900 degrees C because the diffusion coefficient is below 4 x 10(-16) cm(2)/s for the ion-implanted carbon. Therefore, a shallow carrier concentration profile is formed after annealing. Activation efficiency is 17% at the surface (depth less than 0.47 mu m). Hoo ever, this efficiency is as low as 4% in deeper regions. The lower activation efficiency in deeper regions is due to the suppression of activation ion by the precipitation of carbon after the annealing.

引用

页码：L1020 / L1023

页数：4

共 6 条

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