UV PHOTODETECTORS IN 6H-SIC

被引：20

作者：

ANIKIN, MM

ANDREEV, AN

PYATKO, SN

SAVKINA, NS

STRELCHUK, AM

SYRKIN, AL

CHELNOKOV, VE

机构：

[1] A.F. Ioffe Physico-Technical Institute, Academy of Sciences, St. Petersburg

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1992年 / 33卷 / 1-2期

关键词：

D O I：

10.1016/0924-4247(92)80233-S

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated two types of UV photodetector in 6H-SiC: UV photodiodes using SiC Schottky-barrier structures; SiC photodiodes using shallow p-n junctions. The monochromatic sensitivity of the Schottky-barrier photodetectors (at a wavelength of 215 nm) is 0.15 A/W, and of the p-n junction photodetectors (at a wavelength of 225 nm) 0. 3 A/W.

引用

页码：91 / 93

页数：3