THE GROWTH OF GAAS, ALGAAS, INP AND INGAAS BY CHEMICAL BEAM EPITAXY USING GROUP-III AND GROUP-V ALKYLS

被引：36
作者：
TSANG, WT
机构：
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 04期
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D O I：
10.1007/BF02659637
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：235 / 245
页数：11
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