STRUCTURE OF THE ZNSE/GAAS HETEROEPITAXIAL INTERFACE

被引：91

作者：

LI, D ^{[1
]}

GONSALVES, JM ^{[1
]}

OTSUKA, N ^{[1
]}

QIU, J ^{[1
]}

KOBAYASHI, M ^{[1
]}

GUNSHOR, RL ^{[1
]}

机构：

[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 05期

关键词：

D O I：

10.1063/1.103662

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Interfaces of pseudomorphic (100) ZnSe/GaAs heterostructures grown by molecular beam epitaxy have been studied by transmission electron microscopy. The observation of three different heterostructures suggests the existence of a transition structure at the ZnSe/GaAs interfaces which have formed on As-deficient GaAs surfaces. The transition structure appears as a bright line in dark field images of the 200 reflection, while it becomes a dark line in dark field images of the 400 reflection. These observations are explained by assuming the existence of an interface layer which has a zinc blende type structure having vacancies in one of the face centered cubic sublattices.

引用

页码：449 / 451

页数：3

共 12 条

[1]

[Anonymous], 1973, SELECTED VALUES THER

[2]

Belova E K, 1965, IAN SSSR NEORG MATER, V1, P1883

[3] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INSB CDTE HETEROJUNCTIONS FOR MULTILAYER STRUCTURES [J].