A New Surface Analysis Method for Semiconductor Manufacturing, based on Surface-Potential Measurements

被引：0

作者：

Schuetten, R. ^{[1
]}

Kleber, M. ^{[1
]}

Jerenz, M. ^{[1
]}

Gregorius, I. ^{[1
]}

Zimmermann, B. ^{[1
]}

Kaesmaier, R. ^{[1
]}

Hickson, J. ^{[2
]}

Tamayo, N. ^{[2
]}

Newcomb, R. ^{[2
]}

机构：

[1] Qimonda Dresden GmbH & Co OHG, Koenigsbruecker Str 180, D-01099 Dresden, Germany

[2] Qcept Technol, Atlanta, GA 30308 USA

来源：

2009 IEEE/SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE | 2009年

关键词：

D O I：

10.1109/ASMC.2009.5155977

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The introduction of new materials into the process flow, the continuous reduction of device sizes, and the change in thermal budgets from new technologies, all require a continuous assessment and, if necessary, a development of new monitoring capabilities for defects and contamination in the semiconductor industry. Besides the detection of physical defects with optical Hater inspection systems, the detection of thin monolayer contamination, so called 'non-visible' residues (NVR), requires increasing attention. These surface contaminations change the local chemical state of the substrate surface and can be detected by the measurement of the surface potential difference across the wafer. In this study, we describe a method for improving analytical capabilities for contamination control in support of process engineering and development

引用

页码：169 / +

页数：2