DISLOCATION VELOCITIES AND ELECTRONIC DOPING IN SILICON

被引：43
作者：
KULKARNI, SB
WILLIAMS, WS
机构：
[1] UNIV ILLINOIS,DEPT MET,URBANA,IL 61801
[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[3] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
[4] UNIV ILLINOIS,DEPT CERAMIC ENGN,URBANA,IL 61801
来源：
JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 10期
关键词：
D O I：
10.1063/1.322433
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4318 / 4325
页数：8
相关论文
共 33 条
[1]   AUGER EFFECT IN SEMICONDUCTORS [J].
BEATTIE, AR ;
LANDSBERG, PT .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256) :16-29
[2]   AUGER-RECOMBINATION IN SI [J].
BECK, JD ;
CONRADT, R .
SOLID STATE COMMUNICATIONS, 1973, 13 (01) :93-95
[3]  
Burns K.M, 1963, PHYSIOTHERAPY, V49, P182
[4]   THEORY OF DISLOCATION MOBILITY IN SEMICONDUCTORS [J].
CELLI, V ;
THOMSON, R ;
KABLER, M ;
NINOMIYA, T .
PHYSICAL REVIEW, 1963, 131 (01) :58-&
[5]   ELECTRONIC STATES ON DISLOCATIONS IN SEMICONDUCTORS [J].
CELLI, V ;
GOLD, A ;
THOMSON, R .
PHYSICAL REVIEW LETTERS, 1962, 8 (03) :96-&
[6]   EFFECTS OF DISLOCATIONS ON MOBILITIES IN SEMICONDUCTORS [J].
DEXTER, DL ;
SEITZ, F .
PHYSICAL REVIEW, 1952, 86 (06) :964-965
[7]  
DORN JE, 1964, T METALL SOC AIME, V230, P1052
[8]   MOBILITY OF HOLES IN DEFORMED SEMICONDUCTORS [J].
DUSTER, F ;
LABUSCH, R .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 60 (01) :161-168
[9]   EFFECT OF IMPURITIES ON INDIVIDUAL DISLOCATION MOBILITY IN SILICON [J].
EROFEEV, VN ;
NIKITENKO, VI ;
OSVENSKII, VB .
PHYSICA STATUS SOLIDI, 1969, 35 (01) :79-+
[10]   CHEMICAL INFLUENCE OF HOLES AND ELECTRONS ON DISLOCATION VELOCITY IN SEMICONDUCTORS [J].
FRISCH, HL ;
PATEL, JR .
PHYSICAL REVIEW LETTERS, 1967, 18 (19) :784-&
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