FIELD-ION MICROSCOPY OF SILICON

被引:50
作者
MELMED, AJ [1 ]
STEIN, RJ [1 ]
机构
[1] NATL BUR STAND,WASHINGTON,DC 20234
关键词
D O I
10.1016/0039-6028(75)90375-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:645 / 648
页数:4
相关论文
共 6 条
[1]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[2]  
BRATTAIN WH, 1953, AT&T TECH J, V32, P1
[3]   FIELD EMISSION FROM SILICON [J].
DASARO, LA .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (01) :33-34
[4]   TECHNIQUE FOR PREPARATION OF GE AND SI FIELD-EMISSION CATHODES [J].
MCNEIL, WD ;
SHEPHERD, WB .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1972, 43 (11) :1636-&
[5]  
MELMED AJ, 1974, 21ST INT FIELD EM S
[6]  
Muller E W, 1969, FIELD ION MICROSCOPY