CHARACTERIZATION OF DEEP LEVELS IN N-TYPE SI EPITAXIAL LAYER

被引：2

作者：

TAKANO, Y ^{[1
]}

FUMA, N ^{[1
]}

NAKAMURA, N ^{[1
]}

TASHIRO, K ^{[1
]}

机构：

[1] ISHIKAWAJIMA HARIMA HEAVY IND CO LTD, RES INST, KOHTO KU, TOKYO 135, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 10A期

关键词：

DLTS; DEEP LEVEL; SI; EPITAXIAL LAYER; FE;

D O I：

10.1143/JJAP.34.L1245

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A deep level of E(c)-0.46 eV (E1) was observed in commercially available Si epitaxial layers. The deep level decreased gradually at room temperature and eventually vanished completely 8 months after growth, and new levels, E(c)-0.08 eV, E(c)-0.10 eV, E(c)-0.14 eV and E(c)-0.21 eV, were observed. After annealing at 750 degrees C, E1 level appeared again and all of the new levels disappeared. All levels, including E1, disappeared upon high-temperature annealing (>1000 degrees C) in a O-2 ambient. It was confirmed that these deep levels were due to contamination by Fe in epitaxial layer.

引用

页码：L1245 / L1247

页数：3

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