PERTURBED ANGULAR-CORRELATION AND RUTHERFORD BACKSCATTERING STUDIES IN INDIUM IMPLANTED SILICON

被引：9

作者：

DEICHER, M

GRUBEL, G

HOFSASS, H

RECKNAGEL, E

WICHERT, T

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1986年 / 15卷 / 1-6期

关键词：

D O I：

10.1016/0168-583X(86)90335-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：418 / 421

页数：4

共 9 条

[1] INCORPORATION OF IMPLANTED IN AND SB IN SILICON DURING AMORPHOUS LAYER REGROWTH [J].

BLOOD, P ;

BROWN, WL ;

MILLER, GL .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :173-182

[2] ION-INDUCED DEFECTS IN SEMICONDUCTORS [J].

CORBETT, JW ;

KARINS, JP ;

TAN, TY .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :457-476

[3]

ERIKSSON L, 1969, J APPL PHYS, V48, P842

[4] CHANNELING OF CONVERSION ELECTRONS FROM RADIOACTIVE IMPURITIES FOR ANALYSIS OF ATOMIC STRUCTURES IN SOLIDS [J].

HOFSASS, H ;

LINDNER, G ;

RECKNAGEL, E ;

WICHERT, T .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 2 (1-3) :13-18

[5] ANNEALING BEHAVIOR OF IN IMPLANTED IN SI STUDIED BY PERTURBED ANGULAR-CORRELATION [J].

KAUFMANN, EN ;

KALISH, R ;

NAUMANN, RA ;

LIS, S .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3332-3336

[6] DEFECTS IN SILICON [J].

NEWMAN, RC .

REPORTS ON PROGRESS IN PHYSICS, 1982, 45 (10) :1163-1210

[7]

RECKNAGEL E, 1983, TOP CURR PHYS, V31, P133

[8]

WICHERT T, COMMUNICATION

[9] LIMITS TO SOLID SOLUBILITY IN ION-IMPLANTED SILICON [J].

WILLIAMS, JS ;

ELLIMAN, RG .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :389-395

← 1 →