ANNEALING BEHAVIOR OF THE KONDO-TYPE ZERO-BIAS CONDUCTANCE PEAK IN TA-TA2O5-AG TUNNELING JUNCTIONS

被引：2
作者：
BRUNNER, M
EKRUT, H
HAHN, A
机构：
来源：
SOLID STATE COMMUNICATIONS | 1983年 / 46卷 / 03期
关键词：
D O I：
10.1016/0038-1098(83)90264-8
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：259 / 261
页数：3
相关论文
共 12 条
[1]   S-D EXCHANGE MODEL OF ZERO-BIAS TUNNELING ANOMALIES [J].
APPELBAUM, J .
PHYSICAL REVIEW LETTERS, 1966, 17 (02) :91-+
[2]   ZERO-BIAS CONDUCTANCE-PEAK ANOMALY OF TA-I-AL TUNNEL JUNCTIONS AT 0.3 K AND 90 KG [J].
APPELBAUM, JA ;
SHEN, LYL .
PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :544-+
[3]  
APPELBAUM JA, 1976, PHYS REV, V154, P633
[4]   METAL-OXIDE-METAL TUNNELING JUNCTIONS ON TA AND NB - BACKGROUND CONDUCTIVITY RESULTING FROM DIFFERENT OXIDE BARRIERS [J].
BRUNNER, M ;
EKRUT, H ;
HAHN, A .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1596-1601
[5]   POLARITY-DEPENDENT TUNNELING CONDUCTANCE OF TA-TA2O5-AG JUNCTIONS [J].
EKRUT, H ;
HAHN, A .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) :1686-1691
[6]  
GARTNER K, 1976, Z NATURFORSCH A, V31, P861
[7]  
GARTNER K, 1976, Z NATURFORSCH A, V31, P858
[8]  
HAHN A, 1983, UNPUB THIN SOLID FIL
[9]   ZERO-BIAS TUNNELING ANOMALIES - TEMPERATURE VOLTAGE AND MAGNETIC FIELD DEPENDENCE [J].
SHEN, LYL ;
ROWELL, JM .
PHYSICAL REVIEW, 1968, 165 (02) :566-&
[10]   CONDUCTANCE OF NIOBIUM OXIDE TUNNEL BARRIERS [J].
WALMSLEY, DG ;
WOLF, EL ;
OSMUN, JW .
THIN SOLID FILMS, 1979, 62 (01) :61-66
12