LUMINESCENCE OF ZINC-DOPED GALLIUM NITRIDE

被引:0
作者
MARASINA, LA [1 ]
PIKHTIN, AN [1 ]
PICHUGIN, IG [1 ]
SOLOMONOV, AV [1 ]
机构
[1] VI LENIN ELECT ENGN INST, LENINGRAD, USSR
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1976年 / 10卷 / 02期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
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页码:221 / 223
页数:3
相关论文
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[2]  
MARASINA LA, 1975, SOV PHYS SEMICOND+, V9, P1162
[3]  
Pankove J. I., 1973, Journal of Luminescence, V7, P114, DOI 10.1016/0022-2313(73)90062-8
[4]   PROPERTIES OF ZN-DOPED GAN .1. PHOTOLUMINESCENCE [J].
PANKOVE, JI ;
BERKEYHE.JE ;
MILLER, EA .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) :1280-1286
[5]  
PIKHTIN AN, 1970, FIZ TVERD TELA+, V12, P307