P-WELLS MADE OF POROUS SILICON FOR POWER DEVICES - DETERMINATION OF THE FORMATION STEPS

被引：2

作者：

DEHU, P ^{[1
]}

SENES, A ^{[1
]}

MISEREY, F ^{[1
]}

机构：

[1] CONSERVATOIRE NATL ARTS & METIERS,PHYS COMPOSANTS ELECTR LAB,F-75141 PARIS 03,FRANCE

来源：

THIN SOLID FILMS | 1995年 / 255卷 / 1-2期

关键词：

ANODIC OXIDATION; DIFFUSION; SILICON; SOLID ELECTROLYTE INTERFACE;

D O I：

10.1016/0040-6090(94)05674-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Porous silicon is formed in N- substrates. The porous layers are about 150 mu m thick. A method to localize these porous areas is defined. These technological results should allow the achievement of diffused wells made of porous silicon. Such wells are thought to considerably improve the performances of symmetrical sustaining voltage power devices.

引用

页码：321 / 324

页数：4

共 6 条

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