AUGER-LIMITED CARRIER LIFETIMES IN HGCDTE AT HIGH EXCESS CARRIER CONCENTRATIONS

被引：70

作者：

BARTOLI, F ^{[1
]}

ALLEN, R ^{[1
]}

ESTEROWI.L ^{[1
]}

KRUER, M ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20390

来源：

关键词：

D O I：

10.1063/1.1663561

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2150 / 2154

页数：5

共 18 条

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[4] RECOMBINATION IN SEMICONDUCTORS BY A LIGHT HOLE AUGER TRANSITION
BEATTIE, AR
SMITH, G
[J]. PHYSICA STATUS SOLIDI, 1967, 19 (02): : 577 - &
[5] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
[6] OPTICAL ABSORPTION IN HGTE + HGCDTE
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[J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (1A): : A226 - &
[7] BRATT P, PRIVATE COMMUNICATIO
[8] CARTER DL, 1971, J PHYS CHEM SOLIDS S, V32, P273
[9] RECOMBINATION MECHANISMS IN 8-14-MU HGCDTE
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SIMMONS, A
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (04) : 1649 - 1663
[10] KINCH MA, 1971, J PHYS CHEM SOLID S1, V32, P461