ELECTRONIC-STRUCTURE OF NICKEL, IRON, AND COBALT IMPURITIES IN MAGNESIUM-OXIDE

被引:17
作者
TIMMER, G
BORSTEL, G
机构
[1] Universität Osnabr̈ck, Fachbereich Physik
来源
PHYSICAL REVIEW B | 1991年 / 43卷 / 06期
关键词
D O I
10.1103/PhysRevB.43.5098
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present theoretical results for the electronic structure of nickel, iron, and cobalt impurities in MgO, calculated using a linear muffin-tin-orbital Green's-function method. We investigate the ground states and the localization properties of these defects, where lattice relaxations are not taken into account. With the help of a method from Fazzio, Caldas, and Zunger we analyze the optical properties of these systems to some extent, showing that they cannot be described within a one-electron picture. Furthermore, we take a close look at the so-called Mott-Hubbard parameter. Here, we analyze two major definitions and show that they lead to quite different results.
引用
收藏
页码:5098 / 5108
页数:11
相关论文
共 86 条
[1]  
Abragam A., 1970, ELECT PARAMAGNETIC R
[2]  
Andersen O. K., 1985, HIGHLIGHTS CONDENSED
[3]  
Andersen O. K., 1986, ELECT BAND STRUCTURE
[4]   LINEAR METHODS IN BAND THEORY [J].
ANDERSEN, OK .
PHYSICAL REVIEW B, 1975, 12 (08) :3060-3083
[5]  
BACHELET GB, 1983, PHYS REV B, V27, P2543
[6]   SELF-CONSISTENT GREENS FUNCTION CALCULATION OF IDEAL SI VACANCY [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW LETTERS, 1978, 41 (13) :892-895
[7]   CALCULATION OF THE TOTAL ENERGY OF CHARGED POINT-DEFECTS USING THE GREENS-FUNCTION TECHNIQUE [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1984, 30 (04) :1853-1866
[8]   SIMPLE PARAMETRIZED MODEL FOR JAHN-TELLER SYSTEMS - VACANCY IN P-TYPE SILICON [J].
BARAFF, GA ;
KANE, EO ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1980, 21 (08) :3563-3570
[9]   IDENTIFICATION OF CHALCOGEN POINT-DEFECT SITES IN SILICON BY TOTAL-ENERGY CALCULATIONS [J].
BEELER, F ;
SCHEFFLER, M ;
JEPSEN, O ;
GUNNARSSON, O .
PHYSICAL REVIEW LETTERS, 1985, 54 (23) :2525-2528
[10]   THEORETICAL EVIDENCE FOR LOW-SPIN GROUND-STATES OF EARLY INTERSTITIAL AND LATE SUBSTITUTIONAL 3D TRANSITION-METAL IONS IN SILICON [J].
BEELER, F ;
ANDERSEN, OK ;
SCHEFFLER, M .
PHYSICAL REVIEW LETTERS, 1985, 55 (14) :1498-1501