ON THE ROLE OF THE SURFACE IN THE PERFORMANCE OF COMPOUND SEMICONDUCTOR-DEVICES

被引：0
|
作者：
OHNO, H [1 ]
HASEGAWA, H [1 ]
SAWADA, T [1 ]
机构：
[1] HOKKAIDO UNIV,DEPT ELECT ENGN,SAPPORO,HOKKAIDO 060,JAPAN
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C217 / C217
页数：1
相关论文
共 50 条
  • [1] SIMULATION OF COMPOUND SEMICONDUCTOR-DEVICES
    SCHOENMAKER, W
    VANKEMMEL, R
    MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) : 31 - 38
  • [2] RELIABILITY OF COMPOUND SEMICONDUCTOR-DEVICES
    FANTINI, F
    MAGISTRALI, F
    MICROELECTRONICS AND RELIABILITY, 1992, 32 (11): : 1559 - 1569
  • [3] THE ROLE OF BOUNDARIES ON HIGH-SPEED COMPOUND SEMICONDUCTOR-DEVICES
    GRUBIN, HL
    KRESKOVSKY, JP
    SURFACE SCIENCE, 1983, 132 (1-3) : 594 - 622
  • [4] EPITAXIAL DIELECTRICS FOR COMPOUND SEMICONDUCTOR-DEVICES
    RADPOUR, F
    SINGH, R
    KAHNG, SK
    NARAYAN, J
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C431 - C431
  • [5] SPECIAL ISSUE ON COMPOUND SEMICONDUCTOR-DEVICES - FOREWORD
    HANETA, Y
    NEC RESEARCH & DEVELOPMENT, 1992, 33 (03): : R1 - R2
  • [6] MATERIALS ISSUES UNDERLYING COMPOUND SEMICONDUCTOR-DEVICES
    LESTER, SD
    STREETMAN, BG
    SUPERLATTICES AND MICROSTRUCTURES, 1986, 2 (01) : 33 - 40
  • [7] THE ROLE OF INTERFACES IN ULTRASMALL SEMICONDUCTOR-DEVICES
    FERRY, DK
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 504 - 509
  • [8] COMPOUND SEMICONDUCTOR-DEVICES FOR OPERATION AT ELEVATED-TEMPERATURES
    HARTNAGEL, HL
    MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) : 115 - 122
  • [9] SEMICONDUCTOR-DEVICES
    SEKIDO, K
    OKUTO, Y
    ABE, H
    MIKAMI, M
    HAMANO, K
    OKADA, K
    HAREYAMA, K
    KATO, H
    TANABE, N
    SAKUMA, H
    KUROBE, T
    MATSUDA, T
    MORI, K
    NAKAO, M
    FUJIOKA, T
    ONO, M
    YOKOYAMA, N
    HAREYAMA, K
    NAGAMI, A
    NOKUBO, J
    NAGAMI, A
    FUJITAKA, I
    KANEKO, H
    IWAMOTO, S
    KOSAKA, H
    SUGAYA, H
    SATO, F
    NAKASHIBA, H
    KOGUCHI, S
    YUKAWA, A
    SATAKE, T
    EGUCHI, S
    ITOH, S
    HIGASHIYAMA, N
    ARIIZUMI, M
    HIDESHIMA, K
    SAIJO, R
    TAKAYAMA, Y
    NAKATA, T
    KAJIMURA, T
    WAKAMATSU, S
    FURUTSUKA, T
    MINEO, A
    FURUSE, T
    MIYAIRI, K
    YOKOTA, H
    MORISHIGE, S
    KANEDA, K
    OGAWA, M
    SONE, J
    NEC RESEARCH & DEVELOPMENT, 1990, (96): : 339 - 381
  • [10] EFFECT OF DEFECTS ON DEVICE PERFORMANCE IN SEMICONDUCTOR-DEVICES
    JAIN, GC
    INDIAN JOURNAL OF TECHNOLOGY, 1973, 11 (10): : 433 - 434
12345