ABOVE-BANDGAP OPTICAL ANISOTROPIES IN THE REFLECTANCE SPECTRA OF SOME CUBIC SEMICONDUCTORS

被引:34
作者
ASPNES, DE
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 04期
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D O I
10.1116/1.583069
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:1138 / 1141
页数:4
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共 28 条
[1]   ANISOTROPIES IN THE ABOVE BAND-GAP OPTICAL-SPECTRA OF CUBIC SEMICONDUCTORS [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW LETTERS, 1985, 54 (17) :1956-1959
[2]   CHEMICAL ETCHING AND CLEANING PROCEDURES FOR SI, GE, AND SOME III-V COMPOUND SEMICONDUCTORS [J].
ASPNES, DE ;
STUDNA, AA .
APPLIED PHYSICS LETTERS, 1981, 39 (04) :316-318
[3]  
ASPNES DE, 1981, SPIE P, V276, P227
[4]  
ASPNES DE, J VAC SCI TECHNOL
[5]  
ASPNES DE, APPL SURF SCI
[6]   SURFACE-REFLECTANCE-SPECTROSCOPY STUDIES OF H ON W(110) - SURFACE BAND-STRUCTURE AND ADSORBATE GEOMETRY [J].
BLANCHET, GB ;
ESTRUP, PJ ;
STILES, PJ .
PHYSICAL REVIEW LETTERS, 1980, 44 (03) :171-174
[7]  
BLANCHET GB, 1981, PHYS REV B, V23, P355
[8]  
CARDONA M, 1966, J PHYS SOC JPN, VS 21, P89
[9]   DIFFERENTIAL REFLECTIVITY OF SI(111)2X1 SURFACE WITH POLARIZED-LIGHT - A TEST FOR SURFACE-STRUCTURE [J].
CHIARADIA, P ;
CRICENTI, A ;
SELCI, S ;
CHIAROTTI, G .
PHYSICAL REVIEW LETTERS, 1984, 52 (13) :1145-1147
[10]  
COXON JA, 1973, MOL SPECTROSC, V1, P177