GAP PHOTOVOLTAGE TRANSIENTS

被引：11

作者：

DAHLBERG, SC ^{[1
]}

CHELIKOWSKY, JR ^{[1
]}

ORR, WA ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1977年 / 15卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.15.3163

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3163 / 3168

页数：6

共 18 条

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BUBE, RH .

PHYSICAL REVIEW, 1955, 99 (04) :1105-1116

[2]

BUBE RH, 1960, PHOTOCONDUCTIVITY SO, P268

[3] PHOTOVOLTAGE STUDIES OF CLEAN AND OXYGEN COVERED GALLIUM-ARSENIDE [J].

DAHLBERG, SC .

SURFACE SCIENCE, 1976, 59 (01) :83-96

[4]

DAHLBERG SC, UNPUBLISHED

[5] INTRINSIC OPTICAL ABSORPTION OF GALLIUM PHOSPHIDE BETWEEN 2.33 AND 3.12 EV [J].

DEAN, PJ ;

KAMINSKY, G ;

ZETTERSTROM, RB .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) :3551-+

[6] ENERGY-DEPENDENT CAPTURE CROSS SECTIONS AND PHOTOLUMINESCENCE EXCITATION SPECTRA OF GALLIUM PHOSPHIDE ABOVE THRESHOLD FOR INTRINSIC INTERBAND ABSORPTION [J].

DEAN, PJ .

PHYSICAL REVIEW, 1968, 168 (03) :889-+

[7] SPECTRAL DISTRIBUTION OF PHOTOCONDUCTIVITY [J].

DEVORE, HB .

PHYSICAL REVIEW, 1956, 102 (01) :86-91

[8] TEMPERATURE-DEPENDENCE AND ILLUMINATION-DEPENDENCE OF WORK FUNCTION OF GALLIUM-ARSENIDE [J].

GALBRAIT.LK ;

FISCHER, TE .

SURFACE SCIENCE, 1972, 30 (01) :185-&

[9] ROLE OF SURFACE TRAPPING IN PHOTOVOLTAGE SPECTROSCOPY [J].

LAGOWSKI, J ;

GATOS, HC .

SURFACE SCIENCE, 1973, 38 (01) :252-256

[10]

LAGOWSKI L, 1972, SURF SCI, V29, P203

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