CHARACTERIZATION OF GA OUT-DIFFUSION FROM GAAS INTO SIOXNY FILMS DURING THERMAL ANNEALING

被引：51

作者：

KUZUHARA, M

NOZAKI, T

KAMEJIMA, T

机构：

[1] NEC CORP LTD,OPTOELECTR RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN

[2] NEC CORP LTD,RESOURCES & ENVIRONM PROTECT RES LABS,KAWASAKI,KANAGAWA 213,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 12期

关键词：

D O I：

10.1063/1.343603

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5833 / 5836

页数：4

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