EPITAXIAL-GROWTH AND BAND BENDING OF N-TYPE AND P-TYPE GE ON GAAS(001)

被引：42
作者：
CHAMBERS, SA
IRWIN, TJ
机构：
来源：
PHYSICAL REVIEW B | 1988年 / 38卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.38.7484
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：7484 / 7492
页数：9
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