ROLE OF POINT-DEFECTS IN GROWTH OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON

被引：41

作者：

MURARKA, SP ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1977年 / 16卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.16.2849

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2849 / 2857

页数：9

共 50 条

[41] NUCLEATION MECHANISM FOR OXIDATION-INDUCED STACKING-FAULTS IN SILICON-CRYSTALS CONTAINING SURFACE DAMAGE
SHEVLIN, CM
DEMER, LJ
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1979, 40 (05): : 685 - 699
[42] CHARACTERIZATION OF EPITAXIAL AND OXIDATION-INDUCED STACKING-FAULTS IN SILICON - THE INFLUENCE OF TRANSITION-METAL CONTAMINATION
HIGGS, V
GOULDING, M
BRINKLOW, A
KIGHTLEY, P
APPLIED PHYSICS LETTERS, 1992, 60 (11) : 1369 - 1371
[43] EFFECT OF OXIDATION-INDUCED STACKING-FAULTS ON DIELECTRIC-BREAKDOWN CHARACTERISTICS OF THERMAL SILICON DIOXIDE
SHIRAI, H
KANAYA, K
YAMAGUCHI, A
SHIMURA, F
JOURNAL OF APPLIED PHYSICS, 1989, 66 (11) : 5651 - 5653
[44] OBSERVATION OF OXIDATION-INDUCED STACKING-FAULTS BY ELECTRON-ACOUSTIC MICROSCOPY
TAKENOSHITA, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (5B): : 2883 - 2885
[45] OXIDATION-INDUCED STACKING-FAULTS IN N-TYPE AND P-TYPE (100) SILICON
MURARKA, SP
QUINTANA, G
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 47 - 47
[46] FAST SHRINKAGE OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON AT THE INITIAL-STAGE OF ANNEALING IN NITROGEN
NISHI, K
ANTONIADIS, DA
APPLIED PHYSICS LETTERS, 1985, 46 (05) : 516 - 518
[47] GETTERING OF COPPER TO OXIDATION INDUCED STACKING-FAULTS IN SILICON
DECOTEAU, MD
WILSHAW, PR
FALSTER, R
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 117 (02): : 403 - 408
[48] ORIGINS OF OXIDATION-INDUCED STACKING-FAULTS IN N-TYPE (100)-ORIENTED SILICON-WAFERS
CHENG, D
HAHN, S
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C91 - C91
[49] OXYGEN PARTIAL-PRESSURE DEPENDENCE OF OXIDATION-INDUCED SURFACE STACKING-FAULTS IN (100) N SILICON
MURARKA, SP
JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) : 5020 - 5026
[50] TIME AND TEMPERATURE-DEPENDENCE OF DENSITY OF OXIDATION-INDUCED STACKING-FAULTS IN DIAMOND-LAPPED SILICON
ISHIHARA, I
KANEKO, H
MATSUMOTO, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (08): : L620 - L622

← 1 2 3 4 5 →