ROLE OF POINT-DEFECTS IN GROWTH OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON

被引：41

作者：

MURARKA, SP ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1977年 / 16卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.16.2849

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2849 / 2857

页数：9

共 50 条

[1] ROLE OF POINT-DEFECTS IN THE GROWTH OF THE OXIDATION-INDUCED STACKING-FAULTS IN SILICON - RETROGROWTH AND EFFECT OF HCL OXIDATION
MURARKA, SP
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C92 - C92
[2] ROLE OF POINT-DEFECTS IN THE GROWTH OF THE OXIDATION-INDUCED STACKING-FAULTS IN SILICON .2. RETROGROWTH, EFFECT OF HCL OXIDATION AND ORIENTATION
MURARKA, SP
PHYSICAL REVIEW B, 1980, 21 (02): : 692 - 701
[3] THE EFFECT OF POINT-DEFECTS ON SILICON EPITAXIAL STACKING-FAULTS
SPARKS, DR
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : C355 - C355
[4] DENSITY OF OXIDATION-INDUCED STACKING-FAULTS IN DAMAGED SILICON
KUPER, FG
DEHOSSON, JTM
VERWEY, JF
JOURNAL OF APPLIED PHYSICS, 1986, 60 (04) : 1530 - 1532
[5] OXIDATION-INDUCED POINT-DEFECTS IN SILICON
ANTONIADIS, DA
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) : 1093 - 1097
[6] TCE OXIDATION FOR THE ELIMINATION OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON
HATTORI, T
SOLID STATE TECHNOLOGY, 1979, 22 (11) : 85 - 89
[7] INFLUENCE OF PHOSPHORUS DIFFUSION ON GROWTH KINETICS OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON
CLAEYS, CL
DECLERCK, GJ
VANOVERSTRAETEN, RJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : C141 - C141
[8] SOURCES OF OXIDATION-INDUCED STACKING-FAULTS IN CZOCHRALSKI SILICON WAFERS
ROZGONYI, GA
MAHAJAN, S
READ, MH
BRASEN, D
APPLIED PHYSICS LETTERS, 1976, 29 (09) : 531 - 533
[9] CONTROL OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON BY CHLORINE IMPLANTATION
KAWADO, S
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (02) : 225 - 232
[10] A MODEL FOR THE FORMATION OF OXIDATION-INDUCED STACKING-FAULTS IN CZOCHRALSKI SILICON
SADAMITSU, S
OKUI, M
SUEOKA, K
MARSDEN, K
SHIGEMATSU, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (5B): : L597 - L599

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